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Angebote für
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Bereiche im
Nanotechnikum |
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Martin-Luther-Universität
Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
Heinrich-Damerow-Str. 4, D-06120 Halle, Germany
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 | V. A. Sivakov, R. Scholz, F. Syrowatka, F. Falk, U Gösele, S. H. Christiansen
Silicon nanowire oxidation: the influence of sidewall structure and gold distribution
Nanotechn. 20 (40) (2009), 405607 |
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| Adriana Szeghalmi, Michael Helgert, Robert Brunner, Frank Heyroth, Ulrich Gösele, Mato Knez
Atomic layer deposition of Al2O3 and TiO2 multilayers for applications as bandpass filters and antireflection coatings.
Appl. Optics 48 (9) (2009), 1727-1732 |
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| Nadine Geyer, Zhipeng Huang, Bodo Fuhrmann, Silko Grimm, Manfred Reiche, Trung-Kien Nguyen-Duc, Johannes de Boor, Hartmut S. Leipner, Peter Werner, Ulrich Gösele
Sub-20 nm Si/Ge superlattice nanowires by metal-assisted etching
Nano Lett. 9 (9) (2009), 3106-3110 |
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| G. Radhakrishnan, A. Freundlich, B. Fuhrmann
Chemical beam epitaxy of highly ordered network of tilted InP nanowires on silicon.
J. Cryst. Growth 311, 7 (2009), 1855-1858 |
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| Johannes de Boor, Nadine Geyer, Ulrich Gösele, Volker Schmidt
Three-beam interference lithography: upgrading a Lloyd?s interferometer for single-exposure hexagonal patterning.
Opt. Lett. 34, 12 (2009), 1783-1785 |
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| Martin Schade, Nadine Geyer, Bodo Fuhrmann, Frank Heyroth, Peter Werner, Hartmut S. Leipner
High-resolution analytical electron microscopy of silicon nanostructures
phys. stat. sol. (c) 6 (3) (2009), 690-695 |
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| Martin Schade, Nadine Geyer, Bodo Fuhrmann, Frank Heyroth, Hartmut S. Leipner
High-resolution analytical electron microscopy of catalytically etched silicon nanowires
Appl. Phys. A 95 (2009), 325-327 |
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| I. Abdulhalim, Alina Karabchevsky,Christian Patzig, Bernd Rauschenbach, Bodo Fuhrmann, Evgeni Eltzov, Robert Marks, Jian Xu, Fan Zhang, Akhlesh Lakhtakia
Surface-enhanced fluorescence from metal sculptured thin films with application to biosensing in water
Appl. Phys. Lett. 94 (2009), 063106 |
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| Ingmar Ratschinski, Frank Heyroth, Wolfgang Fränzel, Hartmut S. Leipner
Anisotropy of crack and dislocation formation in GaAs
phys. stat. sol. (c) (2009), |
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G. Radhakrishnan, A. Freundlich, I. Rusakova, B. Fuhrmann
Growth of semiconductor nanowires using rapidly and uniformly generated metal growth centers.
34th IEEE Photovoltaic specialists conference Philadelphia (2009), 1275-1277 |
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