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Martin-Luther-Universität
Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
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Abstracts

A. Müller, C. Sahin, M. Z. Minhas, B. Fuhrmann, M. E. Flatté, G. Schmidt
Nanoscale tunnel field-effect transistor based on a complex-oxide lateral heterostructure
Phys. Rev. Appl 11 (2019),

We demonstrate a tunnel field-effect transistor based on a lateral heterostructure patterned from anLaAlO3/SrTiO3electron gas. Charge is injected by tunneling from the LaAlO3/SrTiO3contacts andthe current through a narrow channel of insulating SrTiO3is controlled via an electrostatic side gate.Drain-sourceI-Vcurves are measured at low and elevated temperatures. The transistor shows strongelectric-field-dependent and temperature-dependent behavior, with a steep subthreshold slope as smallas 10 mV/dec and a transconductance as high as approximately 22?A/V. A fully consistent transportmodel for the drain-source tunneling reproduces the measured steep subthreshold slope

DOI10.1103/PhysRevApplied.11.064026


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