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Bereiche im
Nanotechnikum |
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Martin-Luther-Universität
Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
Heinrich-Damerow-Str. 4, D-06120 Halle, Germany
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10 | 20 | 30 | 40 | 50 | 60 | 70 | 80 | 90 |100 | 110 | 120 | 130 | 140 | 143 | All
 | H. Lei, H. S. Leipner, V. Bondarenko, J. Schreiber
Identification of the 0.95 eV luminescence band in n-type GaAs:Si
J. Phys. Cond. Mat. 16 (2004), S279-285 |
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| M. R?ssel, H.-R. H?che, H. S. Leipner, D. V?ltzke, H.-P. Abicht, O. Hollricher, J. M?ller, S. Gablenz
Raman microscopic investigations of BaTiO3 precursors with core-shell structure
Analyt. Bioanalyt. Chem. 380 (2004), 157-162 |
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| Hartmut S. Leipner (Ed.)
Innovationsforum Nanostrukturierte Materialien
Martin-Luther-Universität Halle-Wittenberg (2003), |
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| H. S. Leipner, V. V. Mikhnovich, V. Bondarenko, Z. Wang. H. Gu, R. Krause-Rehberg, J.-L. Demenet, J. Rabier
Positron annihilation of defects in silicon deformed at different temperatures
Physica B 340-342 (2003), 617-621 |
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| J. Gebauer, M. Lausmann, F. Redmann, R. Krause-Rehberg, H. S. Leipner, E. R. Weber, P. Ebert
Determination of the Gibbs free energy of formation of Ga vacancies in GaAs by positron annihilation
Phys. Rev. B 67, 23 (2003), 235207 |
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| D. Lorenz, A. Zeckzer, U. Hilpert, P. Grau, H. Johansen, H. S. Leipner
Pop-in effect as homogeneous nucleation of dislocations during nanoindentation
Virt. J. Nanoscale Sci. Technol. 7, 20 (2003), |
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| D. Lorenz, A. Zeckzer, U. Hilpert, P. Grau, H. Johansen, H. S. Leipner
Pop-in effect as homogeneous nucleation of dislocations during nanoindentation
Phys. Rev. B 67 (2003), 172101 |
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| Z. Wang, H. S. Leipner, R. Krause-Rehberg, V. Bodarenko, H. Gu
Defects properties in plastically deformed silicon studied by positron lifetime measurements
Microelectron. Eng. 66, 1-4 (2003), 358-366 |
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| H. Lei, H. S. Leipner, N. Engler
Why are arsenic clusters situated at dislocations in gallium arsenide?
Appl. Phys. Lett. 82, 8 (2003), 1218-1220 |
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| H. Lei, H. S. Leipner, J. Schreiber, J. L. Weyher, T. Wosinski, I. Grzegory
Raman and cathodoluminescence study of dislocations in GaN
J. Appl. Phys. 92, 11 (2002), 6666-6670 |
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10 | 20 | 30 | 40 | 50 | 60 | 70 | 80 | 90 |100 | 110 | 120 | 130 | 140 | 143 | All
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