Interdisziplinäres Zentrum für Materialwissenschaften
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Martin-Luther-Universität
Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
Heinrich-Damerow-Str. 4,
D-06120 Halle, Germany
Tel.: +49 345 55 28471
Telefax:+49 345 55 27390 email: info@cmat.uni-halle.de
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unfortunately no abstract available H. S. Leipner, R. Scholz, F. Syrowatka, P. Werner, K. D. Schicke, J. Schreiber
Copper diffusion in plastically deformed GaAs
Inst. Phys. Conf. Ser. 160 (1997), 87-90
 
abstractE. A. Steinman, H. S. Leipner, H. G. Grimmeiss
The magnesium related luminescence in silicon and its quenching due to the presence of dislocations
Sol. State Phen. 57-58 (1997), 313-318
 
unfortunately no abstract available C. H?bner, H. S. Leipner, R. Krause-Rehberg
Deformation induced defects in GaAs-The role of dislocations
Mater. Sci. Forum 255-257 (1997), 497-499
 
abstractH. S. Leipner, J. Schreiber, H. Uniewski, S. Hildebrandt
Dislocation luminescence in cadmium telluride
Scanning Microsc. Intern. 11, 1 (1997), 149-160
 
unfortunately no abstract available H. Uniewski, J. Schreiber, S. Hildebrandt, H. S. Leipner
SEM CL studies on polar glide dislocations in CdTe
Mater. Sci. Eng. B 42 (1996), 313-316
 
abstractH. S. Leipner, R. Scholz, F. Syrowatka, H. Uniewski, J. Schreiber
Study of copper aggregations at dislocations in GaAs
Mater. Sci. Eng. B 42 (1996), 186-189
 
unfortunately no abstract available F. Syrowatka, R. Scholz, H. Uniewski, J. Schreiber, H. S. Leipner
Wechselwirkung von Kupfer mit Versetzungen in GaAs
In: Rasterelektronenmikroskopie in der Materialpr?fung. Berlin: Deutscher Verband f?r Materialforschung und -pr?fung (1996), 287-292
 
unfortunately no abstract available C. H?bner, H. S. Leipner, O. Storbeck, R. Krause-Rehberg
Defect characterization in plastically deformed undoped gallium arsenide
In: The physics of semiconductors. Ed. M. Scheffler, R. Zimmermann. Singapore: World Scientific 4 (1996), 2805-2808
 
unfortunately no abstract available H. S. Leipner, C. H?bner, O. Storbeck, A. Polity, R. Krause-Rehberg
Defect characterization in plastically deformed undoped gallium arsenide
In: Semiconducting and insulating materials 1996. Piscataway: IEEE 1996 (1996), 283-286
 
abstractC. G. H?bner, T.Staab, H. S. Leipner
TEM studies of the microstructure of pressureless sintered copper
phys. stat. sol. (a) 150 (1995), 653-660
 
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