Organisation
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Aktivitäten
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Kontakt |
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Angebote für Studenten |
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Bereiche im Nanotechnikum |
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Martin-Luther-Universität
Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
Heinrich-Damerow-Str. 4, D-06120 Halle, Germany
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10 | 20 | 30 | 40 | 50 | 60 | 70 | 80 | 90 | 100 | 110 | 120 |130 | 140 | 143 | All
| H. S. Leipner, C. Hübner, T. E. M. Staab, M. Haugk, R. Krause-Rehberg Positron annihilation at dislocations and related point defects in semiconductors phys. stat. sol. (a) 171 (1999), 377-382 |
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| J. Schreiber, L. H?ring, H. Uniewski, S. Hildebrandt, H. S. Leipner Recognition and distribution of A(g) and B(g) dislocations in indentation zones on {111} and {110} surfaces of CdTe phys. stat. sol. (a) 171 (1999), 89-97 |
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R. Krause-Rehberg, H. S. Leipner, A. Polity, F. Rudolf, R. Hammer, M. Jurisch Mechanical damage in GaAs wafers introduced by a diamond saw: A study by means of positron annihilation and electron microscopy phys. stat. sol. (a) 158,2 (1998), 377-383 |
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| S. Hildebrandt, J. Schreiber, W. Hergert, H. Uniewski, H. S. Leipner Theoretical fundamentals and experimental materials and defect studies using quantitative scanning electron microscopy-cathodoluminescence/electron beam induced current on compound semiconductors Scanning Microsc. Intern. 12, 4 (1998), 535-552 |
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| R. Krause-Rehberg, H. S. Leipner, T. Abgarjan, A. Polity Review of defect investigations by means of positron annihilation in II-VI compound semiconductors Appl. Phys. A 66 (1998), 599-614 |
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J. Schreiber, H. Uniewski, S. Hildebrandt, L. H?ring, H. S. Leipner Distinction of the recombination properties and identification of Y luminescence at glide dislocations in CdTe Inst. Phys. Conf. Ser. 157 (1997), 651-654 |
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S. Hildebrandt, H. Uniewski, J. Schreiber, H. S. Leipner Localization of Y luminescence at glide dislocations in cadmium telluride J. Physique III 7, 7 (1997), 1505-1514 |
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| H. S. Leipner, R. Scholz, F. Syrowatka, H. Uniewski, J. Schreiber Interaction of copper with dislocations in GaAs J. Physique III 7, 7 (1997), 1495-1503 |
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| R. Krause-Rehberg, H. S. Leipner Determination of absolute vacancy concentrations in semiconductors by means of positron annihilation Appl. Phys. A 64 (1997), 457-466 |
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H. S. Leipner, C. H?bner, R. Krause-Rehberg Study of plastically deformed semiconductors by means of positron annihilation Mater. Sci. Forum 258-263 (1997), 981-986 |
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10 | 20 | 30 | 40 | 50 | 60 | 70 | 80 | 90 | 100 | 110 | 120 |130 | 140 | 143 | All
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