Template-based SiGe/ Si(001) island formation has been performed by a combination of local anodic oxidation and liquid phase epitaxy. In case of unidirectional stripes the island pattern directly follows along the trenches, whereas a squarelike stripe pattern enforces island nucleation within the oxide-free cavities. The final island size significantly probes an effectively lowered lattice mismatch, thus a locally expanded crystal lattice in noncovered areas of the silicon substrate.