Interdisziplinäres Zentrum für Materialwissenschaften
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      Nanotechnikum
Martin-Luther-Universität
Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
Heinrich-Damerow-Str. 4,
D-06120 Halle, Germany
Tel.: +49 345 55 28471
Telefax:+49 345 55 27390 email: info@cmat.uni-halle.de
[Veröffentlichungen] [Graduierungsarbeiten] [Berichte] [Poster]
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abstractH. S. Leipner, R. F. Scholz, F. Syrowatka, J. Schreiber, P. Werner
Copper diffusion in dislocation-rich gallium arsenide
Phil. Mag. A 79,11 (1999), 2785-2802
 
abstractR. Krause-Rehberg, H. S. Leipner
Positron annihilation in semiconductors
Berlin: Springer-Verlag ISBN 3-540-64371-0 (1999), Springer series in solid-state sciences 127
 
abstractN. Engler, H. S. Leipner, R. F. Scholz, P. Werner, F. Syrowatka, J. Schreiber, U. G?sele
Investigations of extended defects after sulfur diffusion in GaAs
Sol. State Phen. 69-70 (1999), 443-448
 
abstractH. S. Leipner, C. H?bner, T. E. M. Staab, M. Haugk, R. Krause-Rehberg
Positron annihilation at dislocations and related point defects in semiconductors
phys. stat. sol. (a) 171 (1999), 377-382
 
abstractJ. Schreiber, L. H?ring, H. Uniewski, S. Hildebrandt, H. S. Leipner
Recognition and distribution of A(g) and B(g) dislocations in indentation zones on {111} and {110} surfaces of CdTe
phys. stat. sol. (a) 171 (1999), 89-97
 
unfortunately no abstract available R. Krause-Rehberg, H. S. Leipner, A. Polity, F. Rudolf, R. Hammer, M. Jurisch
Mechanical damage in GaAs wafers introduced by a diamond saw: A study by means of positron annihilation and electron microscopy
phys. stat. sol. (a) 158,2 (1998), 377-383
 
abstractS. Hildebrandt, J. Schreiber, W. Hergert, H. Uniewski, H. S. Leipner
Theoretical fundamentals and experimental materials and defect studies using quantitative scanning electron microscopy-cathodoluminescence/electron beam induced current on compound semiconductors
Scanning Microsc. Intern. 12, 4 (1998), 535-552
 
abstractR. Krause-Rehberg, H. S. Leipner, T. Abgarjan, A. Polity
Review of defect investigations by means of positron annihilation in II-VI compound semiconductors
Appl. Phys. A 66 (1998), 599-614
 
unfortunately no abstract available J. Schreiber, H. Uniewski, S. Hildebrandt, L. H?ring, H. S. Leipner
Distinction of the recombination properties and identification of Y luminescence at glide dislocations in CdTe
Inst. Phys. Conf. Ser. 157 (1997), 651-654
 
unfortunately no abstract available S. Hildebrandt, H. Uniewski, J. Schreiber, H. S. Leipner
Localization of Y luminescence at glide dislocations in cadmium telluride
J. Physique III 7, 7 (1997), 1505-1514
 
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