Organisation
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Aktivitäten
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Kontakt |
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Angebote für Studenten |
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Bereiche im Nanotechnikum |
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Martin-Luther-Universität
Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
Heinrich-Damerow-Str. 4, D-06120 Halle, Germany
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10 | 20 | 30 | 40 | 50 | 60 | 70 | 80 | 90 | 100 | 110 |120 | 130 | 140 | 143 | All
| H. S. Leipner, C. G. H?bner, T. E. M. Staab, M. Haugk , A. Sieck, R. Krause-Rehberg, T. Frauenheim Vacancy clusters in plastically deformed semiconductors J. Phys.: Condens. Matter 12 (2000), 10071-10078 |
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| R. F. Scholz, P. Werner, U. G?sele, N. Engler, H. S. Leipner Determination of arsenic diffusion parameters by sulfur indiffusion in gallium arsenide J. Appl. Phys. 88,12 (2000), 7045-7050 |
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| M. Haugk, J. Elsner, T. Frauenheim, T. E. M. Staab, C. D. Latham, R. Jones, H. S. Leipner, T. Heine, G. Seifert, M. Sternberg Structures, energetics and electronic properties of complex III-V semiconductor systems phys. stat. sol. (b) 217,1 (2000), 473-511 |
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| H. S. Leipner, C. G. H?bner, P. Grau, R. Krause-Rehberg Defect investigations in plastically deformed gallium arsenide Physica B 273-274 (1999), 710-713 |
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| H. S. Leipner, R. F. Scholz, N. Engler, F. B?rner, P. Werner, U. G?sele Diffusivity of arsenic interstitials in GaAs studied by sulfur in-diffusion Physica B 273-274 (1999), 697-700 |
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| T. E. M. Staab, M. Haugk, A. Sieck, T. Frauenheim, H. S. Leipner Magic number vacancy aggregates in Si and GaAs - structure and positron lifetime studies Physica B 273-274 (1999), 501-504 |
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| T. E. M. Staab, M. Haugk, T. Frauenheim, H. S. Leipner Magic number vacancy aggregates in GaAs: Structure and positron lifetime studies Phys. Rev. Lett. 83, 26 (1999), 5519-5522 |
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| H. S. Leipner, R. F. Scholz, F. Syrowatka, J. Schreiber, P. Werner Copper diffusion in dislocation-rich gallium arsenide Phil. Mag. A 79,11 (1999), 2785-2802 |
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| R. Krause-Rehberg, H. S. Leipner Positron annihilation in semiconductors Berlin: Springer-Verlag ISBN 3-540-64371-0 (1999), Springer series in solid-state sciences 127 |
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| N. Engler, H. S. Leipner, R. F. Scholz, P. Werner, F. Syrowatka, J. Schreiber, U. G?sele Investigations of extended defects after sulfur diffusion in GaAs Sol. State Phen. 69-70 (1999), 443-448 |
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10 | 20 | 30 | 40 | 50 | 60 | 70 | 80 | 90 | 100 | 110 |120 | 130 | 140 | 143 | All
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