Interdisziplinäres Zentrum für Materialwissenschaften
  Publikationen [suche]   
Organisation
Aktivitäten
Kontakt
Angebote für Studenten
Bereiche im
      Nanotechnikum
Martin-Luther-Universität
Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
Heinrich-Damerow-Str. 4,
D-06120 Halle, Germany
Tel.: +49 345 55 28471
Telefax:+49 345 55 27390 email: info@cmat.uni-halle.de
[Veröffentlichungen] [Graduierungsarbeiten] [Berichte] [Poster]
10 | 20 | 30 | 40 | 50 | 60 | 70 | 80 | 90 | 100 | 110 | 120 | 130 | 135 | All
abstractDaniel Oriwol, Matthias Trempa, Lamine Sylla, Hartmut S. Leipner
Investigation of dislocation cluster evolution during directional solidification of multicrystalline silicon
J. Cryst. Growth 463 (2017), 1-9
 
abstractE. Jarzembowski, B. Fuhrmann, H. Leipner, W. Fränzel, R. Scheer
Ultrathin Cu(In,Ga)Se2 solar cells with point-like back contact in experiment and simulation.
Thin Sol. Films (2016),
 
abstractV. G. Talalaev, B. V. Novikov, G. E. Cirlin, H. S. Leipner
Temperature quenching of spontaneous emission in tunnel-injection nanostructures.
Semicond. 49, 11 (2015), 1483-1492
 
abstractNadine Geyer, Nicole Wollschläger, Bodo Fuhrmann, Alexander Tonkikh, Andreas Berger, Peter Werner, Marco Jungmann, Reinhard Krause-Rehberg, S. Leipner
Influence of the doping level on the porosity of silicon nanowires prepared by metal-assisted chemical etching.
Nanotechnol. 26, 24 (2015), 245301
 
abstractMartin Schade, Bodo Fuhrmann, Angelika Chassé, Frank Heyroth, Mauricio Roczen, Hartmut S. Leipner
Distinction between amorphous and crystalline silicon by means of electron energy-loss spectroscopy.
Appl. Phys. A (2015),
 
abstractV. G. Talalaev, B. V. Novikov, G. E. Cirlin, H. S. Leipner
Temperature quenching of spontaneous emission in tunnel injection nanostructures.
Fiz. Techn. Poluprov. 49, 11 (2015), 1531-1539
 
unfortunately no abstract available Goerg Michler, Hartmut Leipner, Dieter Katzer
Elektronenmikroskopie in Halle.
Elektronenmikroskopie in Halle (Saale). Stand, Perspektiven, Anwendungen. Halle: Heinz-Bethge-Stiftung (2014), 10-15
 
abstractJens Glenneberg, Mandy Zenkner, Gerald Wagner, Sebastian Lemm, Claudia Ehrhardt, Wolfram Münchgesang, Alexandra Buchsteiner, Martin Diestelhorst, Horst Beige, Stefan G. Ebbinghaus, Hartmut S. Leipner
Morphological and microstructural investigations of composite dielectrics for energy storage.
RSC Advances 4 (2014), 61268-61276
 
unfortunately no abstract available M. S. Niepel, B. Fuhrmann, H. S. Leipner, T. Groth
Combined topographical and chemical cues on planar surfaces alter the performance of human fibroblasts.
Bionanomater. 15, S1 (2014), S157
 
abstractClaudia Ehrhardt, Christian Fettkenhauer, Jens Glenneberg, Wolfram Münchgesang, Hartmut S. Leipner, Gerald Wagner, Martin Diestelhorst, Christoph Pientschke, Horst Beige, Stefan G. Ebbinghaus
Enhanced dielectric properties of sol-gel-BaTiO3/P(VDF-HFP) composite films without surface functionalization.
RSC Adv. 4, 76 (2014), 40321-40329
 
abstractHartmut S. Leipner
Nicht technologieneutral.
Phys. J. 13, 7 (2014), 13
 
abstractKoksal Yildiz, Unal Akgul, Hartmut S Leipner, Yusuf Atici
Microstructure of thermoelectric (Bi0.15Sb0.85)2Te3 film.
Appl. Phys. A 117 (3) (2014), 1387-1392
 
abstractA. A. Tonkikh, N. D. Zakharov, C. Eisenschmidt, H. S. Leipner, P. Werner
Aperiodic SiSn/Si Multilayers for Thermoelectric Applications.
J. Cryst. Growth 392 (2014), 49-51
 
abstractM. Schade, T. Mchedlidze, M. Kittler, H. S. Leipner
Light induced crystallization of an amorphous silicon film embedded between silicon oxide layers.
phys. stat. sol. (b) 251(2) (2014), 439-445
 
abstractMartin Schade, Bodo Fuhrmann, Christian Bohley, Sven Schlenker, Neha Sardana, Jörg Schilling, Hartmut S. Leipner
Regular arrays of Al nanoparticles for plasmonic applications
J. Appl. Phys. 115, 8 (2014), 084309
 
abstractI. Höger, T. Schmidt, A. Landgraf, M. Schade, A. Gawlik, G. Andrä, H.S. Leipner, and F. Falk
In situ excimer laser irradiation as cleaning tool for solid phase epitaxy of laser crystallized polycrystalline silicon thin films
phys. stat. sol. (a) 210, 12 (2013), 2729-2735
 
abstractClaudia Ehrhardt, Christian Fettkenhauer, Jens Glenneberg, Wolfram Münchgesang, Hartmut S. Leipner, Martin Diestelhorst, Sebastian Lemm, Horst Beige, Stefan G. Ebbinghaus
A solution-based approach to composite dielectric films of surface functionalized CaCu3Ti4O12 and P(VDF-HFP).
J. Mater. Chem. A 2 (7) (2013), 2266-2274
 
abstractMarcus S. Niepel, Bodo Fuhrmann, Hartmut S. Leipner, Thomas Groth
Nanoscaled surface patterns influence adhesion and growth of human dermal fibroblasts.
Langmuir 29, 43 (2013), 13278-13290
 
abstractD. Oriwol, E.-R. Carl, A. N. Danilewsky, L. Sylla, W. Seifert, M. Kittler, H. S. Leipner
Small-angle subgrain boundaries emanating from dislocation pile-ups in multicrystalline silicon studied with synchrotron white-beam X-ray topography.
Acta Mater. 61, 18 (2013), 6903-6910
 
abstractM. S. Niepel, B. Fuhrmann, H. S. Leipner, T. Groth
The combination of topographical and chemical stimuli controls adhesion and growth of human fibroblasts.
Intern. J. Art. Organs 36, 8 (2013), 551
 
abstractC. Ehrhardt, C. Fettkenhauer, J. Glenneberg, W. Münchgesang, C. Pientschke, T. Großmann, M. Zenkner, G. Wagner, H. S. Leipner, A. Buchsteiner, M. Diestelhorst, S. Lemm, H. Beige, S. G. Ebbinghaus
BaTiO3-P(VDF-HFP) nanocomposite dielectrics - Influence of surface modification and dispersion additives.
Mater. Sci. Eng. B 178 (2013), 881-888
 
abstractM. Elsayed, R. Krause-Rehberg, B. Korff, I. Ratschinski, H. S. Leipner
Divacancy complexes induced by Cu diffusion in Zn-doped GaAs.
Eur. Phys. J. B 86 (2013), 358
 
abstractMartin Hempel, Jens W. Tomm, Fabio La Mattina, Ingmar Ratschinski, Martin Schade, Ivan Shorubalko, Michael Stiefel, Hartmut S. Leipner, Frank M. Kießling, Thomas Elsaesser
Microscopic origins of catastrophic optical damage in diode lasers.
IEEE J. Sel. Top. Quantum Electron. 19, 4 (2013), 1500508
 
abstractKoksal Yildiz, Unal Akgul, Hartmut S. Leipner, Yusuf Atici
Electron microscopy study of thermoelectric n-type Bi2(Te0.9Se0.1)3 film deposited by dc sputtering.
Superlatt. Microstruct. 6 (2013), 60-71
 
abstractNadine Geyer, Bodo Fuhrmann, Hartmut S. Leipner, Peter Werner
Ag-Mediated charge transport during metal-assisted chemical etching of silicon nanowires.
ACS Appl. Mater. Interfaces 5, 10 (2013), 4302-4308
 
abstractM. Elsayed, R. Krause-Rehberg, B. Korff, S. Richter, H. S. Leipner
Identification of As-vacancy complexes in Zn-diffused GaAs.
J. Appl. Phys. 113, 9 (2013), 094902
 
abstractMaurizio Roczen, Abdelazize Laades, Martin Schade, Thomas Barthel, Jose Ordeñez, Jan Amaru Töfflinger, Enno Malguth, Florian Ruske, Caspar Leendertz, Lars Korte, Hartmut S. Leipner, Bernd Rech
Structural properties of Si/SiO2 nanostructures grown by decomposition of substoichiometric SiOxNy layers for photovoltaic applications.
phys. stat. sol. (a) 210, 4 (2013), 676-681
 
abstractI. Ratschinski, H. S. Leipner, F. Heyroth, W. Mook, J. Michler, W. Fränzel, G. Leibiger and F. Habel
Cracks and dislocations at Vickers, Berkovich and cube corner indentations in (0001) GaN single crystals
physica status solidi c 10 (1) (2013), 76-79
 
abstractM. S. Niepel, B. Fuhrmann, H. S. Leipner, T. Groth
Chemically modified nanostructures influencing mammalian cell adhesion
Intern. J. Art. Organs 35, 8 (2012), 565
 
abstractC. Khare, J. W. Gerlach, T. Höche, B. Fuhrmann, H. S. Leipner, B. Rauschenbach
Effects of annealing on arrays of Ge nanocolumns formed by glancing angle deposition.
Appl. Surf. Sci. 258 (2012), 9762-9769
 
abstractTino Rublack, Martin Schade, Markus Muchow, Hartmut S. Leipner, Gerhard Seifert
Proof of damage-free selective removal of thin dielectric coatings on silicon wafers by irradiation with femtosecond laser pulses.
J. Appl. Phys. 112 (2012), 023521
 
abstractI. Ratschinski, H.S. Leipner, F. Heyroth, W. Fränzel, G. Leibiger, F. Habel
The effect of the indenter orientation on the formation of dislocations and cracks in (0001) GaN bulk crystals.
Mater. Sci. Forum 725 (2012), 67-70
 
abstractMartin Schade, Hartmut S. Leipner, Wolfgang Fränzel
Spectroscopic investigation of silicon polymorphs formed by indentation.
Mater. Sci. Forum 725 (2012), 199-202
 
abstractV. G. Talalaev, A. A. Tonkih, N. D. Zaharov, A. V. Senicev, J. W. Tomm, P. Werner, B. V. Novikov, L. V. Asryan, B. Fuhrmann, J. Schilling, H. S. Leipner, A. D. Buravlev, Ju. B. Samsonenko, A. I. Hrebtov, I. P. Sosmikov, G. E. Zyrlin
Svetoizlucajuscie tunnel'nye nanostruktury na osnove kvantovyh tocek b matrice krenija i arsenida gallija (in Russian).
Fiz. tehn. poluprovod. 46, 11 (2012), 1492-1503
 
abstractNadine Geyer, Bodo Fuhrmann, Zhipeng Huang, Johannes de Boor, Hartmut S. Leipner, Peter Werner
Model for the mass transport during metal-assisted chemical etching with contiguous metal films as catalysts.
J. Phys. Chem. C 116 (2012), 13446-13451
 
abstractA. A. Tonkikh, N. Geyer , B. Fuhrmann , H. S. Leipner , P. Werner
Pathway of Porous Silicon Formation Inside Si Nanowires Throughout Metal Assisted Etching.
MRS Proc. 1408 (2012), MRSF11
 
abstractMaurizio Roczen, Martin Schade, Enno Malguth, Gordon Callsen, Thomas Barthel, Orman Gref, Jan A. Töfflinger, Andreas Schöpke, Manfred Schmidt, Hartmut S. Leipner, Florian Ruske, Matthew R. Phillips, Axel Hoffmann, Lars Korte, Bernd Rech
Structural investigations of silicon nanostructures grown by self-organized island formation for photovoltaic applications.
Appl. Phys. A 108 (2012), 719-726
 
abstractV. G. Talalaev, A. A. Tonkikha, N. D. Zakharov, A. V. Senichev, J. W. Tomm, P. Werner, B. V. Novikov, L. V. Asryan, B. Fuhrmann, J. Schilling, H. S. Leipner, A. D. Bouraulev, Yu. B. Samsonenko, A. I. Khrebtov, I. P. Soshnikov, G. E. Cirlin
Ligh-emitting tunneling nanostructures based on quantum dots in a Si and GaAs Matrix.
Semicond. 46, 11 (2012), 1460-1470
 
abstractJin-Biao Pang, Hartmut S. Leipner, Reinhard Krause-Rehberg, Zhu Wang, Kai Zhou. Hui Li
Thermal stability of defects in plastically deformed silicon studied by positron lifetime spectroscopy
Semicond. Sci. Technol. 27, 3 (2012), 035023
 
abstract Tino Rublack, Stefan Hartnauer, Michael Mergner, Markus Muchow, Martin Schade, Hartmut S. Leipner, Gerhard Seifert
Mechanism of selective removal of transparent layers on semiconductors using ultrashort laser pulses.
Proc. SPIE 8247 (2012), 82470Z
 
abstractMaurizio Roczen, Enno Malguth, Martin Schade, Andreas Schöpke, Abdelazize Laades, Michael Blech, Orman Gref, Thomas Barthel, Jan Amaru Töfflinger, Manfred Schmidt, Hartmut S. Leipner, Lars Korte, Bernd Rech
Comparison of growth methods for Si/SiO2 nanostructures as nanodot heteroemitters for photovoltaic application.
J. Non-Cryst. Sol. 358 (2011), 2253-2256
 
abstractA. A. Tonkikh, N. D. Zakharov, A. V. Novikov, K. E. Kudryavtsev, V. G. Talalaev, B. Fuhrmann, H. S. Leipner, P. Werner
Sb mediated formation of Ge/Si quantum dots: Growth and properties.
Thin Sol. Films (2011),
 
abstractA. Buchsteiner, M. Zenkner, T. Großmann, C. Ehrhardt, M. Diestelhorst, S. Lemm, W. Münchgesang, C. Pientschke, J. Glenneberg, H. Beige, S. G. Ebbinghaus, H. S. Leipner
Investigation of 0-3 composites for novel capacitors and energy storage.
Proc. SPIE 8102 (2011), 81021A
 
abstract H.S. Leipner, N. Geyer, F. Syrowatka, H. Cheng, B. Fuhrmann
Fabrication of complex structures with an array of nanopinhole cameras.
Proc. SPIE 8102 (2011), 81020W
 
abstractC. Khare, B. Fuhrmann, H. S. Leipner, J. Bauer, B. Rauschenbach
Optimized growth of Ge nanorod arrays on Si patterns.
.J Vac. Sci. Technol. A 29 (2011), 051501
 
unfortunately no abstract available M. Niepel, B. Fuhrmann, H. S. Leipner, T. Groth
Multischichten aus synthetischen und Biopolymeren steuern die Zelladhäsion auf nanostrukturierten Oberflächen.
Biomater. 12 (1-4) (2011), 143
 
abstractOtwin Breitenstein, Hartmut S. Leipner, Peter Werner (Ed.)
10th International workshop Beam injection Assessment of microstructures in semiconductors.
(2011),
 
unfortunately no abstract available Otwin Breitenstein, Hartmut S. Leipner
Preface.
phys. stat. sol. (c) 8, 4 (2011), A7
 
abstractI. Ratschinski, H. S. Leipner, F. Heyroth, W. Fränzel, R. Hammer, M. Jurisch
Dislocations and cracks at Vickers indentations in GaN and GaAs bulk crystals.
phys. stat. sol. (c) 8, 4 (2011), 1325-1329
 
abstractIngmar Ratschinski, Hartmut S. Leipner, Frank Heyroth, Wolfgang Fränzel, Osama Moutanabbir, Ralf Hammer, Manfred Jurisch
Indentation-induced dislocations and cracks in (0001) freestanding and epitaxial GaN.
J. Phys. Conf. Ser. 281, 1 (2011), 012007
 
abstractK. Rothe, M. Stordeur, F. Heyroth, F. Syrowatka, H.S. Leipner
Electrical and structural real-time changes in thin thermoelectric (Bi0.15Sb0.85)(2)Te3 films by dynamic thermal treatment.
J. Electron. Mater. 39, 9 (2010), 1408-1412
 
abstractK. Rothe, M. Stordeur, H. S. Leipner
Power factor anisotropy of p-type and n-type conductive thermoelectric Bi-Sb-Te thin films.
J. Electron. Mater. 39, 9 (2010), 1395-1398
 
abstractI. Ratschinski, H. S. Leipner, F. Heyroth, W. Fränzel, R. Hammer, M. Jurisch
Dislocations and cracks at Vickers indentations in (0001) GaN single crystals.
Phil. Mag. Lett. 90 (8) (2010), 565-571
 
abstractJuergen Reif, Olga Varlamova, Markus Ratzke, Martin Schade, Hartmut S. Leipner, Tzanimir Arguirov
Multipulse feedback in self-organized ripples formation upon femtosecond laser ablation from silicon
Appl Phys A 101 (2010), 361–365
 
abstractM. Schade, O. Varlamova, J. Reif, H. Blumtritt, W. Erfurth, H. S. Leipner
High-resolution investigations of ripple structures formed by femtosecond laser irradiation of silicon
Anal. Bioanal. Chem. 396 (2010), 1905-1911
 
abstractZhidan Zeng, Xiangyang Ma, Jiahe Chen, Deren Yang, Ingmar Ratschinski, Frank Hevroth, Hartmut S. Leipner
Effect of oxygen precipitates on dislocation motion in Czochralski silicon
J. Cryst. Growth 312, 2 (2010), 169-173
 
abstractJuergen Reif, Olga Varlamova, Mourad Bounhalli, Tzanimir Arguirov, Martin Schade, Hartmut S. Leipner
Long-time feedback in self-organized nanostructures formation upon multi-pulse femtosecond laser ablation.
Proc SPIE 7586 (2010), 75860H
 
abstractKatrin Bertram, Matthias Stordeur, Frank Heyroth, Hartmut S. Leipner
Dynamic in situ observations of electrical and structural changes in thin thermoelectric (Bi0.15Sb0.85)2Te3 films
J. Appl. Phys. 106 (6) (2009), 063711
 
abstractNadine Geyer, Zhipeng Huang, Bodo Fuhrmann, Silko Grimm, Manfred Reiche, Trung-Kien Nguyen-Duc, Johannes de Boor, Hartmut S. Leipner, Peter Werner, Ulrich Gösele
Sub-20 nm Si/Ge superlattice nanowires by metal-assisted etching
Nano Lett. 9 (9) (2009), 3106-3110
 
abstractMartin Schade, Nadine Geyer, Bodo Fuhrmann, Frank Heyroth, Peter Werner, Hartmut S. Leipner
High-resolution analytical electron microscopy of silicon nanostructures
phys. stat. sol. (c) 6 (3) (2009), 690-695
 
abstractMartin Schade, Nadine Geyer, Bodo Fuhrmann, Frank Heyroth, Hartmut S. Leipner
High-resolution analytical electron microscopy of catalytically etched silicon nanowires
Appl. Phys. A 95 (2009), 325-327
 
abstractIngmar Ratschinski, Frank Heyroth, Wolfgang Fränzel, Hartmut S. Leipner
Anisotropy of crack and dislocation formation in GaAs
phys. stat. sol. (c) (2009),
 
abstractC. Patzig, B. Fuhrmann, H. S. Leipner, B. Rauschenbach
Silicon nanocolumns on nanosphere lithography templated substrates: Effects of sphere size and substrate temperature
J. Nanosci. Nanotechnol. 8, 12 (2008), 1-7
 
abstractC. Patzig, B. Rauschenbach, B. Fuhrmann, H. S. Leipner
Growth of Si nanorods in honeycomb and hexagonal-closed-packed arrays using glancing angle deposition
J. Appl. Phys. 103 (2008), 024313
 
abstractH. S. Leipner, M. Kittler
Preface
phys. stat. sol. (c) 4, 8 (2007), VIII
 
abstractH. S. Leipner (Ed.)
Proceedings of the International conference on Extended defects in semiconductors (EDS 2006)
Weinheim: Wiley-VCH (2007),
 
abstractM. Schade, F. Heyroth, F. Syrowatka, H. S. Leipner, T. Boeck, M. Hanke
Investigation of the chemical composition profile of SiGe/Si(001) islands by analytical transmission electron microscopy
Appl. Phys. Lett. 90 (2007), 263101
 
abstractJ. Bauer, V. Gottschalch, H. Paetzelt, G. Wagner, B. Fuhrmann, H. S. Leipner
MOVPE growth and real structure of vertical-aligned GaAs nanowires
J. Cryst. Growth 298 (2007), 625-630
 
unfortunately no abstract available M. Schade, F. Heyroth, H. S. Leipner, M. Hanke
Combined HRXRD and EELS investigations of SiGe/Si(001) islands grown by means of liquid phase epitaxy.
Microsc. Microanal. 13 (2007), Suppl. 3
 
abstractJ. Zhang, F. Paumier, T. H?che, F. Heyroth, F. Syrowatka, R. J. Gaboriaud, H. S. Leipner
Electron energy-loss spectroscopy investigations of Y2O3 films on Si (001) substrate
Thin Sol. Films 496 (2006), 266-272
 
abstractH. J. Fan, B. Fuhrmann, R. Scholz, C. Himcinschi, A. Berger, H. Leipner, A. Dadgar, A. Krost, S. Christiansen, U. G?sele, M. Zacharias
Vapour-transport-deposition growth of ZnO nanostructures: switch between c-axial wires and a-axial belts by indium doping
Nanotechnol. 17 (2006), S231-239
 
abstractC. Heiliger, F. Heyroth, F. Syrowatka, H. S. Leipner, I. Maznichenko, K. Kokko, W. Hergert, I. Mertig
Orientation-dependent electron-energy-loss spectroscopy of TiO2: A comparison of theory and experiment
Phys. Rev. B 73 (2006), 045129
 
abstractB. Fuhrmann, H. S. Leipner, H.-R. H?che. L. Schubert, P. Werner, U. G?sele
Ordered arrays of silicon nanowires produced by nanosphere lithography and molecular beam epitaxy
Nano Lett. 5, 12 (2005), 2524-2527
 
abstractJ. Zhang, A. Visinoiu, F. Heyroth, F. Syrowatka, M. Alexe, D. Hesse, H. S. Leipner
High-resolution electron energy-loss spectroscopy of BaTiO3/SrTiO3 multilayers
Physical Review B 71 (2005), 064108-064114
 
abstractH. S. Leipner, H. Lei
Diffusion-drift-aggregation model of the interaction of point defects and dislocations in semiconductors
phys. stat. sol. (c) 2 (6) (2005), 1859-1863
 
abstractR. Krause-Rehberg, H. S. Leipner
Positron annihilation in condensed matter
Encyclopedia pf physics. Ed. R. G. Lerner, G. L. Trigg. Weinheim: Wiley-VCH 2nd edition (2005),
 
abstractH.-R. H?che, H. S. Leipner, H. Graener
Editorial
Scientia halensis 12, 2 (2004), S4
 
abstractH. S. Leipner, P. Werner
Atome sehen ? Mikroskope f?r kleinste Strukturen
Scientia halensis 12, 2 (2004), 9-10
 
abstractR. Krause-Rehberg, G. Brauer, H. S. Leipner
EPOS ? eine neue intensive Positronenquelle f?r die Materialforschung
Scientia halensis 12, 2 (2004), 13-14
 
abstractH. S. Leipner
Die Objekte sind winzig ? die Chancen riesig
Das Innovationsforum ?Nanostrukturierte Materialien?

Scientia halensis 12, 2 (2004), S19
 
abstractH. S. Leipner, Z. Wang. H. Gu, V. V. Mikhnovich, V. Bondarenko, R. Krause-Rehberg, J.-L. Demenet, J. Rabier
Defects in silicon plastically deformed at room temperature
phys. stat. sol. (a) 201, 9 (2004), 2021-2028
 
abstractHartmut S. Leipner, Hans-Reiner Höche (Ed.)
Nanostrukturierte Materialien im Blickpunkt der Wissenschaft.
Scientia Halensis Martin-Luther-Universität Halle-Wittenberg (2004),
 
abstractH. S. Leipner, R. Krause-Rehberg
Positron annihilation studies of open-volume defects in silicon
Progress in silicon materials - From microelectronics to photovoltaics and optoelectronics. Ed. D. Yang. Beijing: Science Press (2004), pp. 202-214
 
abstractH. Lei, H. S. Leipner, V. Bondarenko, J. Schreiber
Identification of the 0.95 eV luminescence band in n-type GaAs:Si
J. Phys. Cond. Mat. 16 (2004), S279-285
 
abstractM. R?ssel, H.-R. H?che, H. S. Leipner, D. V?ltzke, H.-P. Abicht, O. Hollricher, J. M?ller, S. Gablenz
Raman microscopic investigations of BaTiO3 precursors with core-shell structure
Analyt. Bioanalyt. Chem. 380 (2004), 157-162
 
abstractHartmut S. Leipner (Ed.)
Innovationsforum Nanostrukturierte Materialien
Martin-Luther-Universität Halle-Wittenberg (2003),
 
abstractH. S. Leipner, V. V. Mikhnovich, V. Bondarenko, Z. Wang. H. Gu, R. Krause-Rehberg, J.-L. Demenet, J. Rabier
Positron annihilation of defects in silicon deformed at different temperatures
Physica B 340-342 (2003), 617-621
 
abstractJ. Gebauer, M. Lausmann, F. Redmann, R. Krause-Rehberg, H. S. Leipner, E. R. Weber, P. Ebert
Determination of the Gibbs free energy of formation of Ga vacancies in GaAs by positron annihilation
Phys. Rev. B 67, 23 (2003), 235207
 
abstractD. Lorenz, A. Zeckzer, U. Hilpert, P. Grau, H. Johansen, H. S. Leipner
Pop-in effect as homogeneous nucleation of dislocations during nanoindentation
Virt. J. Nanoscale Sci. Technol. 7, 20 (2003),
 
abstractD. Lorenz, A. Zeckzer, U. Hilpert, P. Grau, H. Johansen, H. S. Leipner
Pop-in effect as homogeneous nucleation of dislocations during nanoindentation
Phys. Rev. B 67 (2003), 172101
 
abstractZ. Wang, H. S. Leipner, R. Krause-Rehberg, V. Bodarenko, H. Gu
Defects properties in plastically deformed silicon studied by positron lifetime measurements
Microelectron. Eng. 66, 1-4 (2003), 358-366
 
abstractH. Lei, H. S. Leipner, N. Engler
Why are arsenic clusters situated at dislocations in gallium arsenide?
Appl. Phys. Lett. 82, 8 (2003), 1218-1220
 
abstractH. Lei, H. S. Leipner, J. Schreiber, J. L. Weyher, T. Wosinski, I. Grzegory
Raman and cathodoluminescence study of dislocations in GaN
J. Appl. Phys. 92, 11 (2002), 6666-6670
 
abstractH. Lei, H. S. Leipner, N. Engler, J. Schreiber
Interactions of point defects with dislocations in n-type silicon-doped GaAs
J. Phys. Cond. Mat. 14 (2002), 7963-7971
 
abstractH. S. Leipner, D. Lorenz, A. Zeckzer, H. Lei, P. Grau
Nanoindentation pop-in effect in semiconductors
Physica B 308-310, 1-4 (2001), 446-449
 
abstractH. S. Leipner
Wechselwirkungen zwischen Versetzungen und Punktdefekten in Halbleitern
Habilitation (2001),
 
abstractN. Engler, H. S. Leipner, R. F. Scholz, J. Schreiber, P. Werner
Interaction of copper and sulfur with dislocations in GaAs
Sol. State Phenom. 78-79 (2001), 331-340
 
abstractN. Engler, H. S. Leipner, R. F. Scholz, P. Werner, U. G?sele
Study of As self-diffusion in GaAs using sulfur as a tracer
Physica B 308-310, 1-4 (2001), 742-744
 
abstractV. Bondarenko, K. Petters, R. Krause-Rehberg, J. Gebauer, H. S. Leipner
Study of vacancy-type defects after Cu diffusion in GaAs
Physica B 308-310 (1-4) (2001), 792-795
 
abstractT. E. M. Staab, M. J. Puska, M. Hakkala, A. Sieck, M. Haugk, T. Frauenheim, H. S. Leipner
Irradiation experiment revisited - Stability and positron lifetime of large vacancy clusters in silicon
Mater. Sci. Forum 363-365 (2001), 135-137
 
abstractH. S. Leipner, C. G. H?bner, T. E. M. Staab, R. Krause-Rehberg
Open volume defects in plastically deformed semiconductors
Mater. Sci. Forum 363-365 (2001), 61-63
 
abstractK. Petters, J. Gebauer, F. Redmann, H. S. Leipner, R. Krause-Rehberg
Formation of vacancy clusters during copper diffusion in semiinsulating GaAs
Mater. Sci. Forum 363-365 (2001), 111-113
 
unfortunately no abstract available H. S. Leipner, D. Lorenz, A. Zeckzer, and P. Grau
Dislocation-related pop-in effect in gallium arsenide
physica status solidi (a) 183, 2 (2001), R4-6
 
abstractH. S. Leipner, C. G. H?bner, T. E. M. Staab, M. Haugk , A. Sieck, R. Krause-Rehberg, T. Frauenheim
Vacancy clusters in plastically deformed semiconductors
J. Phys.: Condens. Matter 12 (2000), 10071-10078
 
abstractR. F. Scholz, P. Werner, U. G?sele, N. Engler, H. S. Leipner
Determination of arsenic diffusion parameters by sulfur indiffusion in gallium arsenide
J. Appl. Phys. 88,12 (2000), 7045-7050
 
abstractM. Haugk, J. Elsner, T. Frauenheim, T. E. M. Staab, C. D. Latham, R. Jones, H. S. Leipner, T. Heine, G. Seifert, M. Sternberg
Structures, energetics and electronic properties of complex III-V semiconductor systems
phys. stat. sol. (b) 217,1 (2000), 473-511
 
abstractH. S. Leipner, C. G. H?bner, P. Grau, R. Krause-Rehberg
Defect investigations in plastically deformed gallium arsenide
Physica B 273-274 (1999), 710-713
 
abstractH. S. Leipner, R. F. Scholz, N. Engler, F. B?rner, P. Werner, U. G?sele
Diffusivity of arsenic interstitials in GaAs studied by sulfur in-diffusion
Physica B 273-274 (1999), 697-700
 
abstractT. E. M. Staab, M. Haugk, A. Sieck, T. Frauenheim, H. S. Leipner
Magic number vacancy aggregates in Si and GaAs - structure and positron lifetime studies
Physica B 273-274 (1999), 501-504
 
abstractT. E. M. Staab, M. Haugk, T. Frauenheim, H. S. Leipner
Magic number vacancy aggregates in GaAs: Structure and positron lifetime studies
Phys. Rev. Lett. 83, 26 (1999), 5519-5522
 
abstractH. S. Leipner, R. F. Scholz, F. Syrowatka, J. Schreiber, P. Werner
Copper diffusion in dislocation-rich gallium arsenide
Phil. Mag. A 79,11 (1999), 2785-2802
 
abstractR. Krause-Rehberg, H. S. Leipner
Positron annihilation in semiconductors
Berlin: Springer-Verlag ISBN 3-540-64371-0 (1999), Springer series in solid-state sciences 127
 
abstractN. Engler, H. S. Leipner, R. F. Scholz, P. Werner, F. Syrowatka, J. Schreiber, U. G?sele
Investigations of extended defects after sulfur diffusion in GaAs
Sol. State Phen. 69-70 (1999), 443-448
 
abstractH. S. Leipner, C. H?bner, T. E. M. Staab, M. Haugk, R. Krause-Rehberg
Positron annihilation at dislocations and related point defects in semiconductors
phys. stat. sol. (a) 171 (1999), 377-382
 
abstractJ. Schreiber, L. H?ring, H. Uniewski, S. Hildebrandt, H. S. Leipner
Recognition and distribution of A(g) and B(g) dislocations in indentation zones on {111} and {110} surfaces of CdTe
phys. stat. sol. (a) 171 (1999), 89-97
 
unfortunately no abstract available R. Krause-Rehberg, H. S. Leipner, A. Polity, F. Rudolf, R. Hammer, M. Jurisch
Mechanical damage in GaAs wafers introduced by a diamond saw: A study by means of positron annihilation and electron microscopy
phys. stat. sol. (a) 158,2 (1998), 377-383
 
abstractS. Hildebrandt, J. Schreiber, W. Hergert, H. Uniewski, H. S. Leipner
Theoretical fundamentals and experimental materials and defect studies using quantitative scanning electron microscopy-cathodoluminescence/electron beam induced current on compound semiconductors
Scanning Microsc. Intern. 12, 4 (1998), 535-552
 
abstractR. Krause-Rehberg, H. S. Leipner, T. Abgarjan, A. Polity
Review of defect investigations by means of positron annihilation in II-VI compound semiconductors
Appl. Phys. A 66 (1998), 599-614
 
unfortunately no abstract available J. Schreiber, H. Uniewski, S. Hildebrandt, L. H?ring, H. S. Leipner
Distinction of the recombination properties and identification of Y luminescence at glide dislocations in CdTe
Inst. Phys. Conf. Ser. 157 (1997), 651-654
 
unfortunately no abstract available S. Hildebrandt, H. Uniewski, J. Schreiber, H. S. Leipner
Localization of Y luminescence at glide dislocations in cadmium telluride
J. Physique III 7, 7 (1997), 1505-1514
 
abstractH. S. Leipner, R. Scholz, F. Syrowatka, H. Uniewski, J. Schreiber
Interaction of copper with dislocations in GaAs
J. Physique III 7, 7 (1997), 1495-1503
 
abstractR. Krause-Rehberg, H. S. Leipner
Determination of absolute vacancy concentrations in semiconductors by means of positron annihilation
Appl. Phys. A 64 (1997), 457-466
 
unfortunately no abstract available H. S. Leipner, C. H?bner, R. Krause-Rehberg
Study of plastically deformed semiconductors by means of positron annihilation
Mater. Sci. Forum 258-263 (1997), 981-986
 
unfortunately no abstract available H. S. Leipner, R. Scholz, F. Syrowatka, P. Werner, K. D. Schicke, J. Schreiber
Copper diffusion in plastically deformed GaAs
Inst. Phys. Conf. Ser. 160 (1997), 87-90
 
abstractE. A. Steinman, H. S. Leipner, H. G. Grimmeiss
The magnesium related luminescence in silicon and its quenching due to the presence of dislocations
Sol. State Phen. 57-58 (1997), 313-318
 
unfortunately no abstract available C. H?bner, H. S. Leipner, R. Krause-Rehberg
Deformation induced defects in GaAs-The role of dislocations
Mater. Sci. Forum 255-257 (1997), 497-499
 
abstractH. S. Leipner, J. Schreiber, H. Uniewski, S. Hildebrandt
Dislocation luminescence in cadmium telluride
Scanning Microsc. Intern. 11, 1 (1997), 149-160
 
unfortunately no abstract available H. Uniewski, J. Schreiber, S. Hildebrandt, H. S. Leipner
SEM CL studies on polar glide dislocations in CdTe
Mater. Sci. Eng. B 42 (1996), 313-316
 
abstractH. S. Leipner, R. Scholz, F. Syrowatka, H. Uniewski, J. Schreiber
Study of copper aggregations at dislocations in GaAs
Mater. Sci. Eng. B 42 (1996), 186-189
 
unfortunately no abstract available F. Syrowatka, R. Scholz, H. Uniewski, J. Schreiber, H. S. Leipner
Wechselwirkung von Kupfer mit Versetzungen in GaAs
In: Rasterelektronenmikroskopie in der Materialpr?fung. Berlin: Deutscher Verband f?r Materialforschung und -pr?fung (1996), 287-292
 
unfortunately no abstract available C. H?bner, H. S. Leipner, O. Storbeck, R. Krause-Rehberg
Defect characterization in plastically deformed undoped gallium arsenide
In: The physics of semiconductors. Ed. M. Scheffler, R. Zimmermann. Singapore: World Scientific 4 (1996), 2805-2808
 
unfortunately no abstract available H. S. Leipner, C. H?bner, O. Storbeck, A. Polity, R. Krause-Rehberg
Defect characterization in plastically deformed undoped gallium arsenide
In: Semiconducting and insulating materials 1996. Piscataway: IEEE 1996 (1996), 283-286
 
abstractC. G. H?bner, T.Staab, H. S. Leipner
TEM studies of the microstructure of pressureless sintered copper
phys. stat. sol. (a) 150 (1995), 653-660
 
abstractH. S. Leipner, R. Krause-Rehberg, C. H?bner
Generation of point defects during plastic deformation of InP
Mater. Sci. Forum 196-201 (1995), 1267-1272
 
abstractT. Sekiguchi, H. S. Leipner
Damage-induced luminescence in InP
Appl. Phys. Lett. 67, 25 (1995), 3777-3779
 
10 | 20 | 30 | 40 | 50 | 60 | 70 | 80 | 90 | 100 | 110 | 120 | 130 | 135 | All


Impressum Copyright © Center of Materials Science, Halle, Germany. All rights reserved.