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H. Lei, H. S. Leipner, J. Schreiber, J. L. Weyher, T. Wosinski, I. Grzegory
Raman and cathodoluminescence study of dislocations in GaN
J. Appl. Phys. 92, 11 (2002), 6666-6670

Structural and optical properties of freshly created and in-grown dislocations in GaN single crystal are investigated by Raman and cathodoluminescence (CL) microscopy. The introduction of a high density of dislocations by micro-indentation is accompanied by the generation of intrinsic point defects. A high amount of VGa-impurity complexes is responsible for the decrease in the free electron concentration and the enhanced yellow luminescence around the indentation. A compressive stress induced by deformation is revealed by Raman scattering and CL. In-grown dislocations are decorated with a point defect atmosphere, leading to a reduction in the free carrier concentration around the dislocation.
© Journal of Applied Physics

Keywords: dislocations; gallium nitride; cathodoluminescence; Raman; deformation; indentation; in-grown; point defects; carrier concentration; decoration
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