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H. S. Leipner, D. Lorenz, A. Zeckzer, H. Lei, P. Grau
Nanoindentation pop-in effect in semiconductors
Physica B 308-310, 1-4 (2001), 446-449

First direct evidence is given on the formation of dislocations in room-temperature nanoindentation experiments of gallium arsenide wafers. The formation of dislocation loops, which have been examined by transmission electron microscopy, can be related to the pop-in effect found in depth-sensitive hardness measurements. In the case of silicon, no dislocations are found. Instead, different high-pressures phases could be identified by Raman microscopy.

Keywords: Deformation; Nanoindentation; Dislocation sources; Transmission electron microscopy
© Elsevier Physica B

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