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Martin-Luther-Universität
Interdisziplinäres Zentrum für Materialwissenschaften
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Abstracts

Haojie Zhang, Dirk J. Hagen, Xiaopeng Li, Andreas Graff, Frank Heyroth, Bodo Fuhrmann, Ilya Kostanovskiy, Stefan L. Schweizer, Francesco Caddeo, A. Wouter Maijenburg, Stuart Parkin, Ralf B. Wehrspohn
Atomic Layer Deposition of Cobalt Phosphide for Efficient Water Splitting
Angew. Chem. Int. Ed. 59 (2020), 17172-17176

Transition-metal phosphides (TMP) prepared by atomic layer deposition (ALD) are reported for the first time. Ultrathin Co-P films were deposited by using PH(3)plasma as the phosphorus source and an extra H(2)plasma step to remove excess P in the growing films. The optimized ALD process proceeded by self-limited layer-by-layer growth, and the deposited Co-P films were highly pure and smooth. The Co-P films deposited via ALD exhibited better electrochemical and photoelectrochemical hydrogen evolution reaction (HER) activities than similar Co-P films prepared by the traditional post-phosphorization method. Moreover, the deposition of ultrathin Co-P films on periodic trenches was demonstrated, which highlights the broad and promising potential application of this ALD process for a conformal coating of TMP films on complex three-dimensional (3D) architectures.

Keywords: atomic layer deposition (ALD); PH(3)plasma; thin-films; transition-metal phosphide (TMP); water splitting

DOI10.1002/anie.202002280


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