In this work, the successful use of AlN/GaN superlattices (SL) as the low-index lambda/4 layer of distributed Bragg reflectors (DBR) is demonstrated. DBR samples were grown with MOVPE on 2 inch sapphire substrates and a standard GaN buffer structure. The samples were characterized using high-resolution X-ray diffraction (HRXRD), transmission electron microscopy (TEM), atomic force microscopy (AFM) and white-light reflectometry. With this concept, effective Al contents of 30% in the low-index layers of the DBR can be realized without the occurrence of layer cracking or relaxation. This is attributed to a staircase propagation of the TD in the DBR structure. By kinking into the in-plane direction, the TD is able to relieve in-plane strain on a micro-scale. In this way, relaxation or cracking of the whole layer can be prohibited. A study of growth rate optimization was performed. As a result, the growth rate of the DBR was increased maintaining the high interface quality and optical performance.