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M. Schade, F. Heyroth, F. Syrowatka, H. S. Leipner, T. Boeck, M. Hanke
Investigation of the chemical composition profile of SiGe/Si(001) islands by analytical transmission electron microscopy
Appl. Phys. Lett. 90 (2007), 263101

The authors have determined the composition profile within individual Si1 - xGex nanoscale islands on Si(001). Samples have been grown by means of liquid phase epitaxy in the Stranski-Krastanov mode. By applying electron energy loss spectroscopy, the intensities of Si K and Ge L edges have been measured to determine the relative atomic concentration of germanium. The quantification of the composition suggests a profile comprising of two regions with different linear concentration gradients.

Keywords: growth, SiGe, composition, analytical transmission electron microscopy, EELS
© American Institute of Physics 2006

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