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Bereiche im
Nanotechnikum |
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Martin-Luther-Universität
Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
Heinrich-Damerow-Str. 4, D-06120 Halle, Germany
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J. Bauer, V. Gottschalch, H. Paetzelt, G. Wagner, B. Fuhrmann, H. S. Leipner
MOVPE growth and real structure of vertical-aligned GaAs nanowires
J. Cryst. Growth 298 (2007), 625-630
We studied the influence of the substrate preparation and the growth conditions important to fabricate GaAs nanowires (NWs) with
metal-organic vapor phase epitaxy. The growth parameters temperature, precursor partial pressures and growth duration were
investigated. The definite choice of the V/III ratio enables NW length growth independent on the diameter. By investigating the temporal
evolution of the GaAs-NW growth a diameter-dependent growth rate could be determined. Applying nanosphere lithography arranged
GaAs-NW arrays were achieved. The NWs morphology and real structure was investigated using (high-resolution) transmission electron
microscopy and selective area diffraction. The twin formation in GaAs NWs was investigated. A crystallographic model is presented.
2006 Elsevier B.V. All rights reserved.
PACS: 61.46; 68.65. k; 78.67. n; 81.15.Gh; 81.16. c; 81.07. b
Keywords: A1. Nanostructures; A3. Metal-organic vapor phase epitaxy; B2. Semiconducting gallium arsenide
Keywords: growth, nanowires, gallium arsenide, lithography, transmission electron microscopy, HREM
© Elsevier B. V. 2006
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