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M.Hanke, M.Schmidbauer, R.K?hler, H.Kirmse, M.Pristovsek
Lateral short range ordering of step bunches in MOCVD grown InGaAs/GaAs superlattices
J. Appl. Phys. 95 (2004), 1736-1739

In the present paper we report on structural investigations of fivefold InGaAs/GaAs superlattices which have been grown by means of metal organic chemical vapor deposition on vicinal GaAs(001) substrates. Cross-sectional transmission electron micrographs exhibit an initially flat and nonfaceted grooved surface, while step bunching occurs during subsequent growth stages with an inclined vertical inheritance approximately 45? off the [001] direction. A reconstructed sample cross section on the base of high resolution x-ray diffraction data qualitatively confirms the local morphology proved by transmission electron microscopy. Moreover, a line shape analysis of diffusely scattered intensity using Gauss profiles indicates a lateral short range ordering of step bunches.

Keywords: InGaAs/GaAs, step bunching, x-ray scattering, tranmission electron microscopy

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